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parameter max. units v ds drain- source voltage -12 v i d @ t a = 25c continuous drain current, v gs @ -4.5v -16 i d @ t a = 70c continuous drain current, v gs @ -4.5v -13 a i dm pulsed drain current -65 p d @t a = 25c power dissipation 2.5 p d @t a = 70c power dissipation 1.6 linear derating factor 20 mw/c v gs gate-to-source voltage 8 v t j, t stg junction and storage temperature range -55 to +150 c 11/17/08 www.irf.com 1 irf7410pbf hexfet power mosfet these p-channel hexfet power mosfets from international rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. this benefit provides the designer with an extremely efficient device for use in battery and load management applications.. the so-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. with these improvements, multiple devices can be used in an application with dramatically reduced board space. the package is designed for vapor phase, infrared, or wave soldering technique description ultra low on-resistance p-channel mosfet surface mount available in tape & reel lead-free parameter max. units r ja maximum junction-to-ambient 50 c/w thermal resistance
top view 8 1 2 3 4 5 6 7 d d d g s a d s s so-8 v dss r ds(on) max i d -12v 7m ? @v gs = -4.5v - 16a 9m ? @v gs = -2.5v - 13.6a 13m ? @v gs = -1.8v - 11.5a

2 www.irf.com s d g repetitive rating; pulse width limited by max. junction temperature. pulse width 400s; duty cycle surface mounted on 1 in square cu board, t 10sec. electrical characteristics @ tj = 25c (unless otherwise specified) symbol parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage -12 ??? ??? v ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.006 ??? v/c ??? ??? 7 ??? ??? 9 ??? ??? 13 v gs(th) gate threshold voltage -0.4 ??? -0.9 v ? v gs(th) / ? t j gate threshold voltage coefficient ??? -3.09 ??? mv/c gfs forward transconductance 55 ??? ??? s i dss drain-to-source leakage current ??? ??? -1.0 ??? ??? -25 i gss gate-to-source forward leakage ??? ??? -100 gate-to-source reverse leakage ??? ??? 100 q g total gate charge ??? 91 q gs gate-to-source charge ??? 18 ??? q gd gate-to-drain ("miller") charge ??? 25 t d(on) turn-on delay time ??? 13 20 t r rise time ??? 12 18 t d(off) turn-off delay time ??? 271 407 t f fall time ??? 200 300 c iss input capacitance ??? 8676 ??? c oss output capacitance ??? 2344 ??? c rss reverse transfer capacitance ??? 1604 ??? source-drain ratings and characteristics symbol parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? -1.2 v t rr reverse recovery time ??? 97 145 ns t j = 25c i f = -2.5a q rr reverse recovery charge ??? 134 201 c di/dt = -100a/ s r ds(on) static drain-to-source on-resistance ??? ??? ??? ??? -2.5 -65 ns pf a v gs = -2.5v, i d = -13.6a v gs = -1.8v, i d = -11.5a v ds = v gs , i d = -250a m ? a na nc v ds = -10v, i d = -16a i d = -16a v gs = -8v v gs = 8v mosfet symbol showing the v ds =-9.6v conditions r g = 6 ? v gs = 0v v ds = -10v ? = 1.0 mhz t j = 25c, i s = -2.5a, v gs = 0v integral reverse p-n junction diode. conditions v gs = 0v, i d = -250a reference to 25c, i d = -1ma v gs = -4.5v, i d = -16a v ds = -9.6v, v gs = 0v v ds = -9.6v, v gs = 0v, t j = 70c i d =-1.0a r d = 6 ? v gs = -4.5v v dd = -6v v gs = -4.5v
www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -4.5v -16a 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) -1.0v 60s pulse width tj = 150c vgs top -7.0v -5.0v -4.5v -2.5v -1.8v -1.5v -1.2v bottom -1.0v 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 v gs , gate-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = -10v 60s pulse width 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top -7.0v -5.0v -4.5v -2.5v -1.8v -1.5v -1.2v bottom -1.0v -1.0v 60s pulse width tj = 25c
4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 20 40 60 80 100 120 0 1 2 3 4 5 6 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs i = d -16a v = -9.6v ds 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms 1 10 100 -v ds , drain-to-source voltage (v) 0 2000 4000 6000 8000 10000 12000 14000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd
www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 4 8 12 16 t , case temperature ( c) -i , drain current (a) c d
1 0.1 %
+ - v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10a. switching time test circuit fig 10b. switching time waveforms
6 www.irf.com fig 13. typical on-resistance vs. drain current fig 12. typical on-resistance vs. gate voltage 0.0 2.0 4.0 6.0 8.0 -v gs, gate -to -source voltage (v) 0.002 0.004 0.006 0.008 0.010 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = -16a fig 14b. gate charge test circuit fig 14a. basic gate charge waveform q g q gs q gd v g charge d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 0.0 10.0 20.0 30.0 40.0 50.0 60.0 70.0 -id , drain current ( a ) 0 0.005 0.01 0.015 0.02 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) v gs = -2.5v v gs = -1.8v v gs = -4.5v
www.irf.com 7 fig 15. typical vgs(th) vs. junction temperature -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.2 0.4 0.6 0.8 1.0 - v g s ( t h ) ( v ) i d = -250a fig 16 typical power vs. time 0.0001 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000 time (sec) 0 100 200 300 400 500 600 700 p o w e r ( w )
8 www.irf.com so-8 package outline (mosfet & fetky)

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$%$ ! ! ! $$ & ! dimensions are shown in milimeters (inches) so-8 part marking information

note: for the most current drawing please refer to ir website at http://www.irf.com/package/
www.irf.com 9 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 11/2008 so-8 tape and reel dimensions are shown in milimeters (inches) note: for the most current drawing please refer to ir website at http://www.irf.com/package/

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